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 LESHAN RADIO COMPANY, LTD.
2-Input NAND Gate
MC74VHC1G00
The MC74VHC1G00 is an advanced high speed CMOS 2-input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74VHC1G00 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G00 to be used to interface 5 V circuits to 3 V circuits. * High Speed: t PD = 3.0 ns (Typ) at V CC = 5 V * Low Power Dissipation: I CC = 2 mA (Max) at T A = 25C * Power Down Protection Provided on Inputs * Balanced Propagation Delays * Pin and Function Compatible with Other Standard Logic Families
MARKING DIAGRAMS
5 4 1 2 3
V1d
SC-70/SC-88A/SOT-353 DF SUFFIX CASE 419A
Pin 1 d = Date Code
5 4
Figure 1. Pinout (Top View)
1 2 3
V1d
Figure 2. Logic Symbol
Pin 1 d = Date Code
SOT-23/TSOP-5/SC-59 DT SUFFIX CASE 483
FUNCTION TABLE
PIN ASSIGNMENT 1 2 3 4 5 IN B IN A GND OUT Y V CC A L L H H Inputs B L H L H Output Y H H H L
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
VH0-1/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G00
MAXIMUM RATINGS
Parameter Value Unit DC Supply Voltage - 0.5 to + 7.0 V DC Input Voltage - 0.5 to V CC + 0.5 V DC Output Voltage - 0.5 to V CC + 0.5 V DC Input Diode Current 20 mA DC Output Diode Current 20 mA DC Output Sink Current 12.5 mA DC Supply Current per Supply Pin 25 mA Storage Temperature Range - 65 to + 150 C Lead Temperature, 1 mm from Case for 10 Seconds 260 C Junction Temperature Under Bias + 150 C Thermal Resistance SC-70/SC-88A (Note 1) 150 C/W TSOP-5 200 PD Power Dissipation in Still Air at 85C SC-70/SC-88A 150 mW TSOP-5 230 MSL Moisture Sensitivity Level 1 Flammability Rating Oxygen Index: 30% - 35% UL 94 V-0 (0.125 in) FR V ESD ESD Withstand Voltage Human Body Model (Note 2) >2000 V Machine Model (Note 3) > 200 Charged Device Model (Note 4) N/A I LATCH-UP Latch-Up Performance Above V CC and Below GND at 85C (Note 5) 500 mA Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute-maximum-rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm-by-1 inch, 2-ounce copper trace with no air flow. 2. Tested to EIA/JESD22-A114-A. 3. Tested to EIA/JESD22-A115-A. 4. Tested to JESD22-C101-A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter V CC DC Supply Voltage V IN DC Input Voltage V OUT DC Output Voltage TA Operating Temperature Range t r ,t f Input Rise and Fall Time Symbol V CC V IN V OUT I IK I OK I OUT I CC T STG TL TJ JA
V CC = 3.3 0.3 V V CC = 5.0 0.5 V
Min 2.0 0.0 0.0 - 55 0 0
Max 5.5 5.5 V CC + 125 100 20
Unit V V V C ns/V
TIME TO 0.1% BOND FAILURES
Junction Temperature C 80 90 100 110 120 130 140 Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900 Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
VH0-2/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G00
DC ELECTRICAL CHARACTERISTICS V Symbol V IH Parameter Minimum High-Level Input Voltage Test Conditions
CC
T A = 25C Min 1.5 2.1 3.15 3.85 0.5 0.9 1.35 1.65 1.9 2.9 4.4 2.58 3.94 0.0 0.0 0.0 0.1 0.1 0.1 0.36 0.36
0.1
T A < 85C -55C to 125C Min 1.5 2.1 3.15 3.85 0.5 0.9 1.35 1.65 1.9 2.9 4.4 2.48 3.80 0.1 0.1 0.1 0.44 0.44
1.0
(V) 2.0 3.0 4.5 5.5 2.0 3.0 4.5
Typ
Max
Max
Min 1.5 2.1 3.15 3.85
Max
Unit V
V IL
Maximum Low-Level Input Voltage
0.5 0.9 1.35 1.65 1.9 2.9 4.4 2.34 3.66 0.1 0.1 0.1 0.52 0.52
1.0
V
V OH
Minimum High-Level Output Voltage V IN = V IH or V IL
V IN = V IH or V IL I OH = - 50 A V IN = V IH or V IL I OH = -4 mA
5.5 2.0 3.0 4.5 3.0 4.5 2.0 3.0 4.5 3.0 4.5 0 to5.5 5.5
2.0 3.0 4.0
V
V OL
Maximum Low-Level Output Voltage V IN = V IH or V IL
I OH = -8 mA V IN = V IH or V IL I OL = 50 A V IN = V IH or V IL I OL = 4 mA
V
I IN I CC
Maximum Input Leakage Current Maximum Quiescent Supply Current
I OL = 8 mA V IN = 5.5 V or GND V IN = V CC or GND
A A
2.0
20
40
AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 ns Symbol t PLH , t PHL Parameter Maximum Propagation Delay, Input A or B to Y V CC = 5.0 0.5 V C L = 15 pF C L = 50 pF C IN Maximum Input Capacitance Typical @ 25C, V CC = 5.0 V C PD Power Dissipation Capacitance (Note 6) 10 pF 3.0 3.8 5.5 5.5 7.5 10 6.5 8.5 10 8.0 10.0 10 pF Test Conditions V CC = 3.3 0.3 V C L = 15 pF C L = 50 pF Min T A < 85C -55C6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: I CC(OPR) = C PD * V CC * f in + I CC . C PD is used to determine the no- load dynamic power consumption; P D = C PD * V CC 2 * f in + I CC * V CC .
*Includes all probe and jig capacitance. A 1-MHz square input wave is recommended for propagation delay tests.
Figure 4. Switching Waveforms
Figure 5. Test Circuit
VH0-3/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G00
DEVICE ORDERING INFORMATION Device Nomenclature Device Order Number
MC74VHC1G00DFT MC74VHC1G00DFT2 MC74VHC1G00DTT1
Package Type Package Tape and Suffix
DF DF DT
Logic
Temp
Circuit Range Technology Indicator Identifier
MC MC MC 74 74 74 VHC1G VHC1G VHC1G
Device Function
00 00 00
Reel Suffix
T1 T2 T1
(Name/SOT#/ Common Name)
SC-70/SC-88A/ SOT-353 SC-70/SC-88A/ SOT-353 SOT-23/TSOP-5/ SC-59
Tape and Reel Size
178 mm (7 in) 3000 Unit 178 mm (7 in) 3000 Unit 178 mm (7 in) 3000 Unit
VH0-4/4


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